一种提高UV光刻胶硬度的新型UV烘烤工艺

1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453) Pub Date : 1999-06-08 DOI:10.1109/VTSA.1999.786019

C.S. Hunag, B. Tsui, H. Shieh, R. Mohondro

{"title":"一种提高UV光刻胶硬度的新型UV烘烤工艺","authors":"C.S. Hunag, B. Tsui, H. Shieh, R. Mohondro","doi":"10.1109/VTSA.1999.786019","DOIUrl":null,"url":null,"abstract":"A new baking gas using a mixture of NH/sub 3/ and N/sub 2/ gases can effectively reduce the photoresist thickness shrinkage, CD variation and footing during the UV-bake DUV photoresist hardening process has been developed. After this UV baking process, a higher etch selectivity to photoresist and better CD control and profile processing can be achieved in high density plasma (HDP) dry etchers for applications to 0.2 /spl mu/m contact holes with aspect-ratio greater than 5 and 0.22 /spl mu/m aluminum metal lines with aspect-ratio of 2.5.","PeriodicalId":237214,"journal":{"name":"1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A novel UV baking process to improve DUV photoresist hardness\",\"authors\":\"C.S. Hunag, B. Tsui, H. Shieh, R. Mohondro\",\"doi\":\"10.1109/VTSA.1999.786019\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new baking gas using a mixture of NH/sub 3/ and N/sub 2/ gases can effectively reduce the photoresist thickness shrinkage, CD variation and footing during the UV-bake DUV photoresist hardening process has been developed. After this UV baking process, a higher etch selectivity to photoresist and better CD control and profile processing can be achieved in high density plasma (HDP) dry etchers for applications to 0.2 /spl mu/m contact holes with aspect-ratio greater than 5 and 0.22 /spl mu/m aluminum metal lines with aspect-ratio of 2.5.\",\"PeriodicalId\":237214,\"journal\":{\"name\":\"1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-06-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VTSA.1999.786019\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VTSA.1999.786019","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

采用NH/sub / 3/和N/sub / 2/气体混合的新型烘烤气体，可以有效地降低光抗胶剂在uv烘烤硬化过程中的厚度收缩、CD变化和结合力。在此UV烘烤工艺后，高密度等离子体(HDP)干式蚀刻机可以实现更高的光刻选择性、更好的CD控制和轮廓处理，适用于宽高比大于5的0.2 /spl mu/m接触孔和宽高比为2.5的0.22 /spl mu/m铝金属线。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A novel UV baking process to improve DUV photoresist hardness

A new baking gas using a mixture of NH/sub 3/ and N/sub 2/ gases can effectively reduce the photoresist thickness shrinkage, CD variation and footing during the UV-bake DUV photoresist hardening process has been developed. After this UV baking process, a higher etch selectivity to photoresist and better CD control and profile processing can be achieved in high density plasma (HDP) dry etchers for applications to 0.2 /spl mu/m contact holes with aspect-ratio greater than 5 and 0.22 /spl mu/m aluminum metal lines with aspect-ratio of 2.5.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453)

自引率

0.00%

发文量