嵌入式纠错码(ECC)商用存储器件的中子诱导单事件扰动(SEU)测试

2017 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2017-07-17 DOI:10.1109/NSREC.2017.8115445

J. Bird, Michael K. Peters, T. Z. Fullem, Michael J. Tostanoski, T. F. Deaton, Kristianto Hartojo, Roy E. Strayer

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引用次数: 6

摘要

介绍了内嵌纠错码器件的中子诱导单事件扰动试验结果。具体来说，Cypress CY7C1061GE30-10BVXI和CY7C1061GE-10BVXI 16 mbit静态随机存取存储器(sram)，以及由Tundra Tsi107 PowerPC主机桥接9个微米MT48LC32M8A2TG-75ITD 256 mbit同步动态随机存取存储器(sdram)组成的存储系统。用14mev中子源辐照每种存储系统或器件类型的4个样品。使用几个位模式的连续读/写正确循环照射单元。可纠正和不可纠正错误的结果，以及横截面数据和软错误率。

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Neutron induced single event upset (SEU) testing of commercial memory devices with embedded error correction codes (ECC)

Results of neutron induced single event upset testing of devices with embedded error correction codes are described. Specifically, Cypress CY7C1061GE30-10BVXI and CY7C1061GE-10BVXI 16-Mbit Static Random Access Memories (SRAMs), and a memory system, consisting of a Tundra Tsi107 PowerPC Host Bridge interfacing with nine Micron MT48LC32M8A2TG-75ITD 256-Mbit Synchronous Dynamic Random Access Memories (SDRAMs). Four samples of each memory system or device type were irradiated with a 14-MeV neutron source. The units were irradiated using a continual read/write correct loop using several bit patterns. Results for both correctable and uncorrectable errors are presented along with cross section data and soft error rates.

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2017 IEEE Radiation Effects Data Workshop (REDW)

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