单层石墨烯几何二极管增强的不对称性

2017 Silicon Nanoelectronics Workshop (SNW) Pub Date : 2017-06-01 DOI:10.23919/SNW.2017.8242335

V. Passi, A. Gahoi, M. Lemme

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引用次数: 1

摘要

颈宽为50 nm的单层石墨烯几何二极管显示出创纪录的高电流不对称性1.48。颈角为30°和45°的二极管在不对称性方面没有显著变化，而颈角为60°的二极管在不对称性方面已经观察到减少，这归因于二极管结构的物理不对称性的减少。

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Enhanced asymmetry in monolayer graphene geometric diodes

Monolayer graphene geometric diodes with neck width of 50 nm exhibit record high current asymmetry of 1.48. Diodes with neck angles of 30° and 45° show no significant change in asymmetry, while a reduction in asymmetry has been observed for a diode with a neck angle of 60°, attributed to the reduction in physical asymmetry of the diode structure.

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2017 Silicon Nanoelectronics Workshop (SNW)

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