{"title":"隧道二极管微波振荡器的设计程序","authors":"Liquan Wang, E. Wasige","doi":"10.1109/ICMMT.2008.4540529","DOIUrl":null,"url":null,"abstract":"Negative differential resistance (NDR) devices such as Esaki tunnel diodes or resonant tunnelling diodes are ideal for the realisation of high frequency oscillators. However, the oscillation frequency cannot usually be predicted precisely and the output power is quite weak. In this paper, a tunnel diode oscillator topology to which the conventional negative resistance oscillator methodology can be employed is shown to yield predictable oscillation frequencies, delivering the maximum possible output power. Methods for DC and RF characterization of NDR devices are also described.","PeriodicalId":315133,"journal":{"name":"2008 International Conference on Microwave and Millimeter Wave Technology","volume":"57 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"A design procedure for tunnel diode microwave oscillators\",\"authors\":\"Liquan Wang, E. Wasige\",\"doi\":\"10.1109/ICMMT.2008.4540529\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Negative differential resistance (NDR) devices such as Esaki tunnel diodes or resonant tunnelling diodes are ideal for the realisation of high frequency oscillators. However, the oscillation frequency cannot usually be predicted precisely and the output power is quite weak. In this paper, a tunnel diode oscillator topology to which the conventional negative resistance oscillator methodology can be employed is shown to yield predictable oscillation frequencies, delivering the maximum possible output power. Methods for DC and RF characterization of NDR devices are also described.\",\"PeriodicalId\":315133,\"journal\":{\"name\":\"2008 International Conference on Microwave and Millimeter Wave Technology\",\"volume\":\"57 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-04-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 International Conference on Microwave and Millimeter Wave Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMMT.2008.4540529\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 International Conference on Microwave and Millimeter Wave Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMMT.2008.4540529","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A design procedure for tunnel diode microwave oscillators
Negative differential resistance (NDR) devices such as Esaki tunnel diodes or resonant tunnelling diodes are ideal for the realisation of high frequency oscillators. However, the oscillation frequency cannot usually be predicted precisely and the output power is quite weak. In this paper, a tunnel diode oscillator topology to which the conventional negative resistance oscillator methodology can be employed is shown to yield predictable oscillation frequencies, delivering the maximum possible output power. Methods for DC and RF characterization of NDR devices are also described.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
