基于负差分电阻BJT-MOSFET结构的微电子振荡器数学模型

2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO) Pub Date : 2017-04-01 DOI:10.1109/ELNANO.2017.7939736

A. Semenov

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引用次数: 5

摘要

本文研究了一种基于负差分电阻BJT-MOSFET结构的微电子振荡器电路。建立了该振荡器的数学模型。开展了振动动力学的理论和实践研究。计算了李雅普诺夫指数。周期和混沌振荡模式的极限已经确定。得到了振荡的相位图、时间和频率依赖关系。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Mathematical model of the microelectronic oscillator based on the BJT-MOSFET structure with negative differential resistance

The paper considers an electric circuit of a microelectronic oscillator based on a BJT-MOSFET structure with negative differential resistance. A mathematical model of this oscillator has been developed. Theoretical and practical researches of oscillations dynamics have been carried out. Lyapunov exponents have been calculated. Limits of periodic and chaotic oscillations modes have been determined. Phase portraits, time and frequency dependences of oscillations have been obtained.

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来源期刊

2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO)

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