{"title":"5nm厚铁电非掺杂HfO2沉积速率对mfset特性的影响","authors":"Masakazu Tanuma, Joong‐Won Shin, S. Ohmi","doi":"10.1109/ISSM55802.2022.10026898","DOIUrl":null,"url":null,"abstract":"In this research, deposition rate dependence of 5 nm-thick ferroelectric nondoped HfO2 (FeND-HfO2) on the device characteristics was investigated. The equivalent oxide thickness (EOT) and leakage current were decreased by increasing deposition rate of HfO2 from 5.0 nm/min to 6.0 nm/min. The subthreshold swing (SS) of 107 mV/dec. and saturation mobility (μsat) of 150 cm2/(Vs) were obtained with deposition rate of 6.0 nm/min. Furthermore, the threshold voltage (VTH) was controllable as the number of identical erase pulse of 4 V/1 μs was increased, which suggested the VTH control of approximately 10 mV.","PeriodicalId":130513,"journal":{"name":"2022 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Deposition rate dependence of the 5 nm-thick ferroelectric nondoped HfO2 on MFSFET characteristics\",\"authors\":\"Masakazu Tanuma, Joong‐Won Shin, S. Ohmi\",\"doi\":\"10.1109/ISSM55802.2022.10026898\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this research, deposition rate dependence of 5 nm-thick ferroelectric nondoped HfO2 (FeND-HfO2) on the device characteristics was investigated. The equivalent oxide thickness (EOT) and leakage current were decreased by increasing deposition rate of HfO2 from 5.0 nm/min to 6.0 nm/min. The subthreshold swing (SS) of 107 mV/dec. and saturation mobility (μsat) of 150 cm2/(Vs) were obtained with deposition rate of 6.0 nm/min. Furthermore, the threshold voltage (VTH) was controllable as the number of identical erase pulse of 4 V/1 μs was increased, which suggested the VTH control of approximately 10 mV.\",\"PeriodicalId\":130513,\"journal\":{\"name\":\"2022 International Symposium on Semiconductor Manufacturing (ISSM)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-12-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 International Symposium on Semiconductor Manufacturing (ISSM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSM55802.2022.10026898\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 International Symposium on Semiconductor Manufacturing (ISSM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSM55802.2022.10026898","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Deposition rate dependence of the 5 nm-thick ferroelectric nondoped HfO2 on MFSFET characteristics
In this research, deposition rate dependence of 5 nm-thick ferroelectric nondoped HfO2 (FeND-HfO2) on the device characteristics was investigated. The equivalent oxide thickness (EOT) and leakage current were decreased by increasing deposition rate of HfO2 from 5.0 nm/min to 6.0 nm/min. The subthreshold swing (SS) of 107 mV/dec. and saturation mobility (μsat) of 150 cm2/(Vs) were obtained with deposition rate of 6.0 nm/min. Furthermore, the threshold voltage (VTH) was controllable as the number of identical erase pulse of 4 V/1 μs was increased, which suggested the VTH control of approximately 10 mV.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
