半导体材料和器件的噪声光谱

2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595) Pub Date : 2002-08-07 DOI:10.1109/MIEL.2002.1003370

J. Sikula, L. Štourač

{"title":"半导体材料和器件的噪声光谱","authors":"J. Sikula, L. Štourač","doi":"10.1109/MIEL.2002.1003370","DOIUrl":null,"url":null,"abstract":"The noise spectroscopy in time and frequency domain is used to give information on single carrier trapping and charge carrier transport in MOSFETs, quantum dots, conducting film resistors, capacitors and single crystals. Defects in the vicinity of the p-n junction and MOS channel create 1/f noise, burst noise or RTS noise. The sources of fluctuation are quantum transitions of carriers between localised states and energy bands, carrier number and mobility. Noise reliability indicators are used to assess the device quality and reliability.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Noise spectroscopy of semiconductor materials and devices\",\"authors\":\"J. Sikula, L. Štourač\",\"doi\":\"10.1109/MIEL.2002.1003370\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The noise spectroscopy in time and frequency domain is used to give information on single carrier trapping and charge carrier transport in MOSFETs, quantum dots, conducting film resistors, capacitors and single crystals. Defects in the vicinity of the p-n junction and MOS channel create 1/f noise, burst noise or RTS noise. The sources of fluctuation are quantum transitions of carriers between localised states and energy bands, carrier number and mobility. Noise reliability indicators are used to assess the device quality and reliability.\",\"PeriodicalId\":221518,\"journal\":{\"name\":\"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MIEL.2002.1003370\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIEL.2002.1003370","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 6

摘要

时域和频域噪声谱用于研究mosfet、量子点、导电膜电阻器、电容器和单晶中的单载流子捕获和载流子输运。p-n结和MOS通道附近的缺陷会产生1/f噪声、突发噪声或RTS噪声。涨落的来源是载流子在局域态和能带之间的量子跃迁、载流子数和迁移率。噪声可靠性指标用于评价设备的质量和可靠性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Noise spectroscopy of semiconductor materials and devices

The noise spectroscopy in time and frequency domain is used to give information on single carrier trapping and charge carrier transport in MOSFETs, quantum dots, conducting film resistors, capacitors and single crystals. Defects in the vicinity of the p-n junction and MOS channel create 1/f noise, burst noise or RTS noise. The sources of fluctuation are quantum transitions of carriers between localised states and energy bands, carrier number and mobility. Noise reliability indicators are used to assess the device quality and reliability.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)

自引率

0.00%

发文量