An Error Detection And Management Approach For Nonvolatile Electrically Erasable And Programmable Read Only Memory (EEPROM) Systems

This paper describes an approach for detecting and managing bit failures in bulk storage memory systems. This error management scheme is particularly suitable for electrically erasable and programmable Read Only Memory (EEPROM) devices used in applications requiring repetitive write operations. Norden Systems' Need Norden Systems manufactures a Fire Control System (FCS) for the US Army's Multiple Launch Rocket System (MLRS). One of the line replaceable unit (LRU) comprising the FCS contains a Bulk Storage Memory Unit (BSMU) for non-volatile repetitive data storage that uses bubble memory devices. The sole source manufacturer, Hitachi, intends to discontinue bubble memory device manufacturing in the near future. Hitachi offered the user a final opportunity to purchase components. This option is costly and does not ensure an adequate supply of parts for present spares support or future build requirements. Since the present MLRS FCS is to remain in production for the next five years and continue to be fielded for the next ten years, Norden undertook an effort to find an inexpensive, reliable replacement technology for the obsolescent bubble memory device. The new Circuit Card Assembly (CCA) was intended to be a form, fit and function replacement for the existing BSMU. The replacement CCA had to communicate with the host unit's backplane bus and retain the existing BSMU connector pin assignments.