SiGe BiCMOS技术中图案接地屏蔽电感器的可扩展模型的开发

R. Svitek, A. S. Klein, M. Clifford, S. Raman
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引用次数: 7

摘要

本文介绍了一组采用0.18 /spl μ m SiGe:C RFBiCMOS工艺制作的具有各种图案接地屏蔽结构的单片螺旋电感的表征和建模。直接比较了两种不同类型的接地屏蔽,中心接地(CGS)和周长接地(PGS),每一种都采用两种不同的导体层,多晶硅和金属层。利用衬垫寄生去嵌入的晶片上测量方法对所制备的电感进行了表征。采用多晶硅的CGS和金属- 1,以及多晶硅的PGS,实现了比无屏蔽电感质量因数提高36%的效果。最后,提出了考虑不同地盾结构影响的可伸缩集总元模型,并给出了模型提取的初步结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Development of scalable models for patterned-ground-shield inductors in SiGe BiCMOS technology
This paper presents the characterization and modeling of a group of monolithic spiral inductors with various patterned ground shield structures fabricated in a 0.18 /spl mu/m SiGe:C RFBiCMOS process. A direct comparison of two different types of ground shields, center-grounded (CGS) and perimeter-grounded (PGS), each fabricated in two different conductor levels, polysilicon and metal-one, is made. Fabricated inductors are characterized using on-wafer measurement with de-embedding of pad parasitics. A 36% improvement in the inductor quality factor over the unshielded inductor is realized using the CGS in polysilicon and metal-one, and using the PGS in polysilicon. Finally, a scalable lumped-element model that accounts for the effects of the different ground shield structures is proposed, and preliminary results of model extraction are presented.
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