洛伦兹力MOS晶体管

Proceedings. Tenth Annual IEEE International ASIC Conference and Exhibit (Cat. No.97TH8334) Pub Date : 1997-09-07 DOI:10.1109/ASIC.1997.617024

T. Gabara

{"title":"洛伦兹力MOS晶体管","authors":"T. Gabara","doi":"10.1109/ASIC.1997.617024","DOIUrl":null,"url":null,"abstract":"A new set of terminals has been introduced to control the behavior of an MOS device. A magnetic field, formed when current flows through an on-chip coil, is applied to the inversion layer of an MOS device. The generated Lorentz force is applied to the carriers in the inversion layer to alter the characteristics of the MOS device. The magnetic field is applied parallel to the inversion layer and perpendicular to the carrier flow. Measurement results using this structure as a 1.8 GHz mixer are given. Measurements demonstrate that the interaction between the coil and the MOS device is primarily due to the Lorentz force. The capacitive coupling effect between the coil and the device plays a minor role.","PeriodicalId":300310,"journal":{"name":"Proceedings. Tenth Annual IEEE International ASIC Conference and Exhibit (Cat. No.97TH8334)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Lorentz force MOS transistor\",\"authors\":\"T. Gabara\",\"doi\":\"10.1109/ASIC.1997.617024\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new set of terminals has been introduced to control the behavior of an MOS device. A magnetic field, formed when current flows through an on-chip coil, is applied to the inversion layer of an MOS device. The generated Lorentz force is applied to the carriers in the inversion layer to alter the characteristics of the MOS device. The magnetic field is applied parallel to the inversion layer and perpendicular to the carrier flow. Measurement results using this structure as a 1.8 GHz mixer are given. Measurements demonstrate that the interaction between the coil and the MOS device is primarily due to the Lorentz force. The capacitive coupling effect between the coil and the device plays a minor role.\",\"PeriodicalId\":300310,\"journal\":{\"name\":\"Proceedings. Tenth Annual IEEE International ASIC Conference and Exhibit (Cat. No.97TH8334)\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-09-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings. Tenth Annual IEEE International ASIC Conference and Exhibit (Cat. No.97TH8334)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASIC.1997.617024\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. Tenth Annual IEEE International ASIC Conference and Exhibit (Cat. No.97TH8334)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASIC.1997.617024","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

介绍了一套新的终端来控制MOS器件的行为。当电流流过片上线圈时形成的磁场被施加到MOS器件的反转层。将产生的洛伦兹力作用于反转层中的载流子，改变MOS器件的特性。磁场平行于反转层，垂直于载流子流。给出了该结构作为1.8 GHz混频器的测量结果。测量表明，线圈和MOS器件之间的相互作用主要是由于洛伦兹力。线圈与器件之间的电容耦合效应只起很小的作用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Lorentz force MOS transistor

A new set of terminals has been introduced to control the behavior of an MOS device. A magnetic field, formed when current flows through an on-chip coil, is applied to the inversion layer of an MOS device. The generated Lorentz force is applied to the carriers in the inversion layer to alter the characteristics of the MOS device. The magnetic field is applied parallel to the inversion layer and perpendicular to the carrier flow. Measurement results using this structure as a 1.8 GHz mixer are given. Measurements demonstrate that the interaction between the coil and the MOS device is primarily due to the Lorentz force. The capacitive coupling effect between the coil and the device plays a minor role.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings. Tenth Annual IEEE International ASIC Conference and Exhibit (Cat. No.97TH8334)

自引率

0.00%

发文量