{"title":"具有转换增益的微波频率减半器","authors":"S. Stapleton, M. Stubbs","doi":"10.1109/EUMA.1986.334282","DOIUrl":null,"url":null,"abstract":"A novel frequency halver circuit is presented, based on the concept of parametric division using a Schottky diode. This technique utilizes the gate to source Schottky diodes of two FETs in a half frequency, resonant loop configuration. Measurements of such a frequency divider, for an input signal in X-band, show conversion gain with good suppression of the fundamental frequency. Unlike its predecessors, it is characterized by a low turn-on threshold.","PeriodicalId":227595,"journal":{"name":"1986 16th European Microwave Conference","volume":"98 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1986-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A Microwave Frequency Halver with Conversion Gain\",\"authors\":\"S. Stapleton, M. Stubbs\",\"doi\":\"10.1109/EUMA.1986.334282\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel frequency halver circuit is presented, based on the concept of parametric division using a Schottky diode. This technique utilizes the gate to source Schottky diodes of two FETs in a half frequency, resonant loop configuration. Measurements of such a frequency divider, for an input signal in X-band, show conversion gain with good suppression of the fundamental frequency. Unlike its predecessors, it is characterized by a low turn-on threshold.\",\"PeriodicalId\":227595,\"journal\":{\"name\":\"1986 16th European Microwave Conference\",\"volume\":\"98 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1986-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1986 16th European Microwave Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUMA.1986.334282\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1986 16th European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.1986.334282","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A novel frequency halver circuit is presented, based on the concept of parametric division using a Schottky diode. This technique utilizes the gate to source Schottky diodes of two FETs in a half frequency, resonant loop configuration. Measurements of such a frequency divider, for an input signal in X-band, show conversion gain with good suppression of the fundamental frequency. Unlike its predecessors, it is characterized by a low turn-on threshold.
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