{"title":"晕注入对mosfet短沟道效应的影响","authors":"Abhineet Sarkar, R. Patil, Pramod Mishra","doi":"10.1145/1980022.1980393","DOIUrl":null,"url":null,"abstract":"The normal short-channel effect of MOSFET's with halo implantation has been investigated. An Athena PLS diffusion model has been used to develop plot for various doses of Arsenic and Boron in PMOS structure using SILVACO. Various doses of both halo, arsenic and boron are changed to observe depletion depth and their resultant increase in threshold voltage in each cases.","PeriodicalId":197580,"journal":{"name":"International Conference & Workshop on Emerging Trends in Technology","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-02-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Impact of halo implantation on short channel effect in MOSFETs\",\"authors\":\"Abhineet Sarkar, R. Patil, Pramod Mishra\",\"doi\":\"10.1145/1980022.1980393\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The normal short-channel effect of MOSFET's with halo implantation has been investigated. An Athena PLS diffusion model has been used to develop plot for various doses of Arsenic and Boron in PMOS structure using SILVACO. Various doses of both halo, arsenic and boron are changed to observe depletion depth and their resultant increase in threshold voltage in each cases.\",\"PeriodicalId\":197580,\"journal\":{\"name\":\"International Conference & Workshop on Emerging Trends in Technology\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-02-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference & Workshop on Emerging Trends in Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1145/1980022.1980393\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference & Workshop on Emerging Trends in Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/1980022.1980393","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Impact of halo implantation on short channel effect in MOSFETs
The normal short-channel effect of MOSFET's with halo implantation has been investigated. An Athena PLS diffusion model has been used to develop plot for various doses of Arsenic and Boron in PMOS structure using SILVACO. Various doses of both halo, arsenic and boron are changed to observe depletion depth and their resultant increase in threshold voltage in each cases.
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