基于封闭布局几何的抗辐射模拟电路性能评价

G. Cardoso, T. Balen
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引用次数: 7

摘要

本文研究了封闭布局晶体管(ELT)对模拟模块设计性能的影响。以一个共源(CS)放大器为例,对该布局技术进行了应用。采用两种不同的方法对ELT器件的有效宽高比(W/L)进行了SPICE模拟。利用商业设计工具提取的等效W/L与文献中提出的一个著名的数学模型进行了比较。仿真考虑了CS放大器的三种不同通道长度。研究了将晶体管漏极作为ELT内端或外端的可能性。根据得到的结果,考虑到0.18μm的工艺,放大器的直流和交流行为可能会有显著的性能差异。此外,为了提高方形elt的可实现宽高比范围,我们建议使用封闭器件的并联和串联关联。根据所需的W/L,也可以通过这种关联来节省硅面积。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Performance evaluation of radiation hardened analog circuits based on Enclosed Layout geometry
This paper presents an investigation on the performance impacts of employing Enclosed Layout Transistor (ELT) to the design of analog building blocks. A common-source (CS) amplifier is considered as case study, to which this layout technique is applied. SPICE simulations are performed, considering two different methodologies to estimate the effective aspect ratio (W/L) of the ELT devices. The extracted equivalent W/L using a commercial design tool is compared with a well-known mathematical model presented in the literature. The simulations were carried out considering three different channel lengths for the CS amplifier. The possibility of setting the transistor drain as the inner or outer terminal of the ELT was also investigated. According to the obtained results, considering a 0.18μm technology, there may be significant performance differences, both in the DC and AC behavior of the amplifier. Additionally, in order to improve the achievable aspect ratio range of square ELTs, we propose to use parallel and series associations of enclosed devices. Depending on the desired W/L, it is also possible to save silicon area with such associations.
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