Finfet技术中环形振荡器性能及寄生提取仿真

2006 IEEE Dallas/CAS Workshop on Design, Applications, Integration and Software Pub Date : 2006-10-01 DOI:10.1109/DCAS.2006.321049

M. Kulkarni, A. Marshall, C. Rinn Cleavelin, W. Xiong, C. Pacha, K. von Armin, T. Schulz, K. Schruefer, P. Patruno

{"title":"Finfet技术中环形振荡器性能及寄生提取仿真","authors":"M. Kulkarni, A. Marshall, C. Rinn Cleavelin, W. Xiong, C. Pacha, K. von Armin, T. Schulz, K. Schruefer, P. Patruno","doi":"10.1109/DCAS.2006.321049","DOIUrl":null,"url":null,"abstract":"Correlation of a full parasitic extracted simulation using StarRC and SPICE to silicon is demonstrated for fully depleted (FD) FinFET silicon-on-insulator ring oscillators. The results indicate similar accuracy can be expected as obtained from bulk simulations. This is important in integrated circuit development, as the accurate simulation of circuit performance is imperative to IC development","PeriodicalId":244429,"journal":{"name":"2006 IEEE Dallas/CAS Workshop on Design, Applications, Integration and Software","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Ring Oscillator Performance and Parasitic Extraction Simulation in Finfet Technology\",\"authors\":\"M. Kulkarni, A. Marshall, C. Rinn Cleavelin, W. Xiong, C. Pacha, K. von Armin, T. Schulz, K. Schruefer, P. Patruno\",\"doi\":\"10.1109/DCAS.2006.321049\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Correlation of a full parasitic extracted simulation using StarRC and SPICE to silicon is demonstrated for fully depleted (FD) FinFET silicon-on-insulator ring oscillators. The results indicate similar accuracy can be expected as obtained from bulk simulations. This is important in integrated circuit development, as the accurate simulation of circuit performance is imperative to IC development\",\"PeriodicalId\":244429,\"journal\":{\"name\":\"2006 IEEE Dallas/CAS Workshop on Design, Applications, Integration and Software\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 IEEE Dallas/CAS Workshop on Design, Applications, Integration and Software\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DCAS.2006.321049\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE Dallas/CAS Workshop on Design, Applications, Integration and Software","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DCAS.2006.321049","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

利用StarRC和SPICE对完全耗尽(FD) FinFET绝缘体上硅环振荡器进行了全寄生提取模拟，证明了与硅的相关性。结果表明，该方法可获得与本体模拟相似的精度。这在集成电路的开发中是很重要的，因为电路性能的精确模拟对集成电路的开发是必不可少的

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Ring Oscillator Performance and Parasitic Extraction Simulation in Finfet Technology

Correlation of a full parasitic extracted simulation using StarRC and SPICE to silicon is demonstrated for fully depleted (FD) FinFET silicon-on-insulator ring oscillators. The results indicate similar accuracy can be expected as obtained from bulk simulations. This is important in integrated circuit development, as the accurate simulation of circuit performance is imperative to IC development

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2006 IEEE Dallas/CAS Workshop on Design, Applications, Integration and Software

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