在杂化取向绝缘体上硅(SOI)衬底上生长的GaN RF miss - hemt的演示

2022 Device Research Conference (DRC) Pub Date : 2022-06-26 DOI:10.1109/DRC55272.2022.9855794

Bao-Yuan Wang, Chin-Ya Su, Tian-Li Wu

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引用次数: 1

摘要

氮化镓hemt具有很高的电子迁移率，在射频领域具有广阔的应用前景。近年来，GaN-on-Si技术备受关注。此外，由于降低了衬底损耗，SOI衬底在射频应用中也很有前景。然而，典型的GaN-on-SOI(绝缘体上硅)需要在SOI衬底上外延。

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Demonstration of Patterned GaN RF MIS-HEMTs Growing on Hybrid Oriented Silicon-on-Insulator (SOI) Substrates

GaN HEMTs are promising for the RF applications due to the high electron mobility. Recently, GaN-on-Si technologies attracts lots of attentions. Furthermore, the SOI substrate is also promising for the RF applications due to the reduction of the substrate loss. However, the typical GaN-on-SOI (silicon-on-insulator) requires the epitaxy on top of the SOI substrates.

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2022 Device Research Conference (DRC)

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