Ge(+)注入制备PNP和NPN SiGe异质结双极晶体管的比较

30th European Solid-State Device Research Conference Pub Date : 2000-09-11 DOI:10.1109/ESSDERC.2000.194761

M. Mitchell, P. Ashburn, H. Graoui, P. Hemment, A. Lamb, S. Hall, S. Nigrin

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引用次数: 1

摘要

研究了用锗离子注入制备的npn和pnp型SiGe异质结双极晶体管。在活性区形成后，将Ge+注入互补双极过程中。由于锗的存在，在npn和pnp晶体管中都观察到集电极电流的增加。注入Ge+对发射极掺杂物的扩散有相反的影响，增加了npn器件中砷的扩散系数，减慢了pnp器件中硼的扩散系数。

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A Comparison of PNP and NPN SiGe Heterojunction Bipolar Transistors Fabricated by Ge(+)-implantation

A study is made of npn and pnp SiGe heterojunction bipolar transistors produced using Ge+-implantation. The Ge+ is implanted into a complementary bipolar process after active area formation. Increased collector currents are observed in both npn and pnp transistors due to the presence of the Ge. The implanted Ge+ has opposing effects on the emitter dopant diffusion increasing the arsenic diffusion coefficient in the npn devices and retarding the boron diffusion coefficient in the pnp devices.

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30th European Solid-State Device Research Conference

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