{"title":"高频场效应管器件的动态特性与模型比较","authors":"M. Dawande","doi":"10.1109/SMIC.2004.1398201","DOIUrl":null,"url":null,"abstract":"A precision dynamic characterization, using fast pulses of varied amplitude with duration of 0.2 /spl mu/s, is performed on high frequency FET devices. The responsible parameters for large signal models are extracted and the models are developed for static and dynamic characteristics. The binning models for the Statz, TOM and Angelov models are developed in the ADS simulation tool and a comparative evaluation is presented.","PeriodicalId":288561,"journal":{"name":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Dynamic characterization and model comparison of high frequency FET devices\",\"authors\":\"M. Dawande\",\"doi\":\"10.1109/SMIC.2004.1398201\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A precision dynamic characterization, using fast pulses of varied amplitude with duration of 0.2 /spl mu/s, is performed on high frequency FET devices. The responsible parameters for large signal models are extracted and the models are developed for static and dynamic characteristics. The binning models for the Statz, TOM and Angelov models are developed in the ADS simulation tool and a comparative evaluation is presented.\",\"PeriodicalId\":288561,\"journal\":{\"name\":\"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-09-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMIC.2004.1398201\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMIC.2004.1398201","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Dynamic characterization and model comparison of high frequency FET devices
A precision dynamic characterization, using fast pulses of varied amplitude with duration of 0.2 /spl mu/s, is performed on high frequency FET devices. The responsible parameters for large signal models are extracted and the models are developed for static and dynamic characteristics. The binning models for the Statz, TOM and Angelov models are developed in the ADS simulation tool and a comparative evaluation is presented.