一种4H-SiC沟槽MOS势垒肖特基整流器

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) Pub Date : 1999-05-26 DOI:10.1109/ISPSD.1999.764088

V. Khemka, V. Ananthan, T. Chow

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引用次数: 6

摘要

我们提出了一个4H-SiC沟槽MOS势垒肖特基(TMBS)整流器的第一个实验演示。研究了TMBS器件的正向和反向特性随各种设计参数的变化规律，并与平面肖特基整流器和平面PiN整流器进行了比较。与Ni/4H-SiC肖特基整流器相比，泄漏电流提高了两个数量级以上。设备上的动态开关测量表明，反向恢复电流可以忽略不计。

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A 4H-SiC trench MOS barrier Schottky (TMBS) rectifier

We present the first experimental demonstration of a 4H-SiC trench MOS barrier Schottky (TMBS) rectifier. The forward and reverse characteristics of the TMBS devices are studied as a function of various design parameters and compared with those of planar Schottky and planar PiN rectifiers. More than two orders of magnitude improvement in the leakage current has been obtained over a Ni/4H-SiC Schottky rectifier. Dynamic switching measurements on the device indicated negligible reverse recovery current.

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11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)

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