利用对称和非对称氧化物间隔片优化双金属栅修饰源FDSOI的性能

2017 International Conference on Emerging Trends in Computing and Communication Technologies (ICETCCT) Pub Date : 2017-11-01 DOI:10.1109/ICETCCT.2017.8280327

A. K. Malviya, R. Chauhan

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引用次数: 1

摘要

本文的研究重点是利用不同类型的高k间隔器来提高导通电流和减小关断电流。一些隔离器提供更好的开电流，一些提供更低的关断电流(漏电流)。采用高k BOX(埋藏氧化层)也可控制泄漏电流的降低。在本文中，我们使用TiO2, HfO2, SÌ3N4和SiO2在50 nm栅长修饰源DMG FDSOI结构。所有仿真部分均在Silvaco工具上完成。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Optimizing performance of dual metal gate modified source FDSOI using symmetric and asymmetric oxide spacers

This Paper is focused on improving the ON current and reducing the OFF current with the use of different types of the high-k spacer. Some spacers provide better ON current and some provide lower OFF current (leakage current). Lowering of leakage current can also be controlled by use of high-K BOX (buried oxide layer). In this paper, we used TiO2, HfO2, SÌ3N4 and SiO2 at 50 nm gate length Modified Source DMG FDSOI structure. All simulation part has been done on Silvaco tool.

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2017 International Conference on Emerging Trends in Computing and Communication Technologies (ICETCCT)

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