Z. Gan, An Zhang, W. Wong, Lifei Zhang, Ye Haohua, C. Tseng
{"title":"ESD门控二极管SPICE紧凑型","authors":"Z. Gan, An Zhang, W. Wong, Lifei Zhang, Ye Haohua, C. Tseng","doi":"10.1109/CSTIC.2015.7153319","DOIUrl":null,"url":null,"abstract":"A physics-based new gated diode SPICE compact model is provided considering the following two effects: (1) the leakage current under reverse bias of gated diode caused by the gate/diffusion overlap tunneling current; (2) the substrate conductivity modulation associated with high injection of carriers due to mobility saturation during high current transmission line pulse (TLP). The new SPICE model matches the silicon data under both ESD TLP and normal DC forward/reverse bias very well. The model is scalable in terms of finger width and number.","PeriodicalId":130108,"journal":{"name":"2015 China Semiconductor Technology International Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"ESD gated diode SPICE compact model\",\"authors\":\"Z. Gan, An Zhang, W. Wong, Lifei Zhang, Ye Haohua, C. Tseng\",\"doi\":\"10.1109/CSTIC.2015.7153319\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A physics-based new gated diode SPICE compact model is provided considering the following two effects: (1) the leakage current under reverse bias of gated diode caused by the gate/diffusion overlap tunneling current; (2) the substrate conductivity modulation associated with high injection of carriers due to mobility saturation during high current transmission line pulse (TLP). The new SPICE model matches the silicon data under both ESD TLP and normal DC forward/reverse bias very well. The model is scalable in terms of finger width and number.\",\"PeriodicalId\":130108,\"journal\":{\"name\":\"2015 China Semiconductor Technology International Conference\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-03-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 China Semiconductor Technology International Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSTIC.2015.7153319\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 China Semiconductor Technology International Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSTIC.2015.7153319","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A physics-based new gated diode SPICE compact model is provided considering the following two effects: (1) the leakage current under reverse bias of gated diode caused by the gate/diffusion overlap tunneling current; (2) the substrate conductivity modulation associated with high injection of carriers due to mobility saturation during high current transmission line pulse (TLP). The new SPICE model matches the silicon data under both ESD TLP and normal DC forward/reverse bias very well. The model is scalable in terms of finger width and number.
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