3D NAND闪存的现状和趋势

L. Heineck, Jin Liu
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引用次数: 13

摘要

随着世界进入数字化转型和人工智能时代,NAND闪存已成为存储介质的首选。保持NAND在可持续扩展路径上的要求从未如此强烈。本文综述了NAND芯片缩放的现状和发展趋势,包括阵列缩放和CMOS缩放。介绍了控制阵列和CMOS缩放的旋钮。考虑了旋钮之间的权衡。讨论了系统性能及其对NAND扩展的要求。最后,本文的结论是,在当前的GAA架构下,成本和性能都可以很好地扩展到下一个十年。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
3D NAND Flash Status and Trends
NAND flash has become the choice of storage media as the world enters the era of digital transformation and artificial intelligence. The request to keep NAND on a sustainable scaling path has never been stronger. In this paper, the status and the trend for NAND scaling, which includes both the array scaling as well as the CMOS scaling, are reviewed. The knobs that govern both array and CMOS scaling are introduced. The tradeoffs among the knobs are considered. System performance and its requirements to NAND scaling is also discussed. Finally, the paper ends with a conclusion that there is a path for both cost and performance scaling well into the next decade with current gate all around (GAA) architecture.
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