等离子体增强化学气相沉积(PECVD)法制备氢化非晶碳(a-C: H)薄膜的表面改性

Lihong Xiao, Erico Zhou, Huan Liu
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引用次数: 0

摘要

研究了PECVD法制备的氢化非晶碳(a-C: H)薄膜表面的改性方法。一种方法是将薄膜暴露在O2-H2等离子体气氛中,由于O2-H2等离子体与活性离子和自由基的反应,所得表面的地形性质可以得到很大的改变,从而随着厚度的减少而将碳除去。另一种方法是将薄膜浸入o3稀释的去离子水中。PECVD过程中在表面产生的自由基通过与氧和/或水的反应被淬灭,并在表面形成氧化的亲水层。因此,薄膜厚度,无论是用KLA工具光学测量还是用TEM图像物理证明,都被证明是增加的,不同于干物理蚀刻。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Surface modification of hydrogenated amorphous carbon (a-C: H) films prepared by plasma enhanced chemical vapor deposition (PECVD)
Methods to modify the film surface of hydrogenated amorphous carbon (a-C: H) produced by PECVD have been studied. One way is to expose the film to O2-H2 plasma atmosphere, the topographical nature of the resulting surface can be modified substantially due to reaction of O2-H2 plasma with active ions and radicals, and therefore ashed carbon away with thickness decrease. The other way is to immerse films into O3-diluted deionized (DI) water. Free radicals produced at the surface during the PECVD process were quenched by reaction with oxygen and/or water and an oxidized hydrophilic layer was formed at the surface. Therefore, the film thickness, either optically measured by KLA tools or physically demonstrated with TEM images, has proven to be increased, different from that of dry physical etching.
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