Xiaoyue Zhao, M. Shao, Houfang Liu, R. Zhao, Xichen Sun, Xiao Liu, Xiaoming Wu, Yi Yang, T. Ren
{"title":"Gd顶电极hf0.5 zr0.5 o2电容器的大矫顽场研究","authors":"Xiaoyue Zhao, M. Shao, Houfang Liu, R. Zhao, Xichen Sun, Xiao Liu, Xiaoming Wu, Yi Yang, T. Ren","doi":"10.1109/ASICON52560.2021.9620386","DOIUrl":null,"url":null,"abstract":"Gd top electrode was applied in the Hf<inf>0.5</inf>Zr<inf>0.5</inf>O<inf>2</inf> (HZO)-based capacitors via re-capping technique and its ferroelectric characteristics were investigated. A recorded-highest positive coercive field value of ~3.02 MV/cm was demonstrated with a P<inf>r</inf> value near 11.1 μC/cm<sup>2</sup>. The asymmetric switching dynamics of the Pt/Gd/HZO/TiN capacitor were studied to confirm the origin of the large E<inf>c</inf>. This work will contribute to the future applications of Gd electrodes in ferroelectric memory transistors.","PeriodicalId":233584,"journal":{"name":"2021 IEEE 14th International Conference on ASIC (ASICON)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Large Coercive Field in Hf0.5Zr0.5O2-based Capacitors with Gd Top Electrode\",\"authors\":\"Xiaoyue Zhao, M. Shao, Houfang Liu, R. Zhao, Xichen Sun, Xiao Liu, Xiaoming Wu, Yi Yang, T. Ren\",\"doi\":\"10.1109/ASICON52560.2021.9620386\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Gd top electrode was applied in the Hf<inf>0.5</inf>Zr<inf>0.5</inf>O<inf>2</inf> (HZO)-based capacitors via re-capping technique and its ferroelectric characteristics were investigated. A recorded-highest positive coercive field value of ~3.02 MV/cm was demonstrated with a P<inf>r</inf> value near 11.1 μC/cm<sup>2</sup>. The asymmetric switching dynamics of the Pt/Gd/HZO/TiN capacitor were studied to confirm the origin of the large E<inf>c</inf>. This work will contribute to the future applications of Gd electrodes in ferroelectric memory transistors.\",\"PeriodicalId\":233584,\"journal\":{\"name\":\"2021 IEEE 14th International Conference on ASIC (ASICON)\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-10-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE 14th International Conference on ASIC (ASICON)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASICON52560.2021.9620386\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE 14th International Conference on ASIC (ASICON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASICON52560.2021.9620386","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Large Coercive Field in Hf0.5Zr0.5O2-based Capacitors with Gd Top Electrode
Gd top electrode was applied in the Hf0.5Zr0.5O2 (HZO)-based capacitors via re-capping technique and its ferroelectric characteristics were investigated. A recorded-highest positive coercive field value of ~3.02 MV/cm was demonstrated with a Pr value near 11.1 μC/cm2. The asymmetric switching dynamics of the Pt/Gd/HZO/TiN capacitor were studied to confirm the origin of the large Ec. This work will contribute to the future applications of Gd electrodes in ferroelectric memory transistors.
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