用于晶圆级封装、电气互连和MEMS应用的薄层Au-Sn焊接工艺

2009 IEEE International Interconnect Technology Conference Pub Date : 2009-06-01 DOI:10.1109/IITC.2009.5090361

N. Belov, T. Chou, J. Heck, K. Kornelsen, D. Spicer, S. Akhlaghi, M. Wang, T. Zhu

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引用次数: 32

摘要

开发的键合工艺使用AuSn焊料，并提供了防液密封和多个可靠的晶圆之间的电气连接。该胶粘剂能耐300℃，粘接线细(2-3µm)，粘接强度高，粘接间隙控制性好，粘接材料用量少，应力小。Nb/Au种子层是一种最佳的粘附和阻隔膜。

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Thin-layer Au-Sn solder bonding process for wafer-level packaging, electrical interconnections and MEMS applications

The developed bonding process utilizes AuSn solder and provides liquid-proof sealing and multiple reliable electrical connections between the bonded wafers. The bond can withstand 300°C and features a thin bond line (2–3 µm), high bond strength, excellent bond gap control, and low stress due to small amount of bonding material. A Nb/Au seed layer was shown to be an optimal adhesion and barrier film.

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2009 IEEE International Interconnect Technology Conference

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