{"title":"利用高k介电介质HfO2提高CNTFET的性能","authors":"D. G. P. Hangargekar, V. Menon, A. Gajarushi","doi":"10.1145/1980022.1980388","DOIUrl":null,"url":null,"abstract":"CNTs with their fascinating properties have been gathering lots of attention in the recent past for their applications as the future of nanoelectronics. This paper presents the analysis of the characteristics of CNT device for different dielectrics, namely SiO2 (3.9) and HfO2(25). HfO2 has shown better capacitance, transconductance and Ion/I off ratio than SiO2 for the same back gate structure and same thickness of oxide with the later being almost 4-5 times than in SiO2 thus indicating excellent off states.","PeriodicalId":197580,"journal":{"name":"International Conference & Workshop on Emerging Trends in Technology","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-02-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Enhancement in the performance of CNTFET by the use of high-k dielectric, HfO2\",\"authors\":\"D. G. P. Hangargekar, V. Menon, A. Gajarushi\",\"doi\":\"10.1145/1980022.1980388\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"CNTs with their fascinating properties have been gathering lots of attention in the recent past for their applications as the future of nanoelectronics. This paper presents the analysis of the characteristics of CNT device for different dielectrics, namely SiO2 (3.9) and HfO2(25). HfO2 has shown better capacitance, transconductance and Ion/I off ratio than SiO2 for the same back gate structure and same thickness of oxide with the later being almost 4-5 times than in SiO2 thus indicating excellent off states.\",\"PeriodicalId\":197580,\"journal\":{\"name\":\"International Conference & Workshop on Emerging Trends in Technology\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-02-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference & Workshop on Emerging Trends in Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1145/1980022.1980388\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference & Workshop on Emerging Trends in Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/1980022.1980388","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Enhancement in the performance of CNTFET by the use of high-k dielectric, HfO2
CNTs with their fascinating properties have been gathering lots of attention in the recent past for their applications as the future of nanoelectronics. This paper presents the analysis of the characteristics of CNT device for different dielectrics, namely SiO2 (3.9) and HfO2(25). HfO2 has shown better capacitance, transconductance and Ion/I off ratio than SiO2 for the same back gate structure and same thickness of oxide with the later being almost 4-5 times than in SiO2 thus indicating excellent off states.
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