Young-bea Park, Se-Ho Kim, Y. Yun, Kyu-Ho Park, K. Ahn, Kim Ki-jin, Kim Jin-Sup, Cho, Se-Hwan
{"title":"采用0.13 μm CMOS技术的射频接收机芯片组,用于k波段商用汽车雷达系统","authors":"Young-bea Park, Se-Ho Kim, Y. Yun, Kyu-Ho Park, K. Ahn, Kim Ki-jin, Kim Jin-Sup, Cho, Se-Hwan","doi":"10.1109/SOCDC.2008.4815705","DOIUrl":null,"url":null,"abstract":"A 24 GHz low-noise amplifier (LNA) and mixer for automotive radar applications was designed using a standard 0.13-mum CMOS technology. For mixer, single balanced resistive mixer was employed to suppress LO leakage signal on RF port. At 24 GHz, the mixer showed a conversion loss of -5.5 dB, an LO leakage suppression of -56.2 dBc on RF port, and 3rd input intercept point of 12 dBm. To achieve sufficient gain, this LNA is composed of three cascaded common-source stages. Source degeneration inductor was used to achieve low noise, and gate resistive matching was used to increase stability. The LNA showed a gain of 15.3 dB and a noise figure of 4.49 dB at 24 GHz, and it showed unconditional stability.","PeriodicalId":405078,"journal":{"name":"2008 International SoC Design Conference","volume":"18 1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"RF receiver chip set employing 0.13 μm CMOS technology for application to K-band commercial automotive radar system\",\"authors\":\"Young-bea Park, Se-Ho Kim, Y. Yun, Kyu-Ho Park, K. Ahn, Kim Ki-jin, Kim Jin-Sup, Cho, Se-Hwan\",\"doi\":\"10.1109/SOCDC.2008.4815705\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 24 GHz low-noise amplifier (LNA) and mixer for automotive radar applications was designed using a standard 0.13-mum CMOS technology. For mixer, single balanced resistive mixer was employed to suppress LO leakage signal on RF port. At 24 GHz, the mixer showed a conversion loss of -5.5 dB, an LO leakage suppression of -56.2 dBc on RF port, and 3rd input intercept point of 12 dBm. To achieve sufficient gain, this LNA is composed of three cascaded common-source stages. Source degeneration inductor was used to achieve low noise, and gate resistive matching was used to increase stability. The LNA showed a gain of 15.3 dB and a noise figure of 4.49 dB at 24 GHz, and it showed unconditional stability.\",\"PeriodicalId\":405078,\"journal\":{\"name\":\"2008 International SoC Design Conference\",\"volume\":\"18 1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 International SoC Design Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOCDC.2008.4815705\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 International SoC Design Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOCDC.2008.4815705","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
RF receiver chip set employing 0.13 μm CMOS technology for application to K-band commercial automotive radar system
A 24 GHz low-noise amplifier (LNA) and mixer for automotive radar applications was designed using a standard 0.13-mum CMOS technology. For mixer, single balanced resistive mixer was employed to suppress LO leakage signal on RF port. At 24 GHz, the mixer showed a conversion loss of -5.5 dB, an LO leakage suppression of -56.2 dBc on RF port, and 3rd input intercept point of 12 dBm. To achieve sufficient gain, this LNA is composed of three cascaded common-source stages. Source degeneration inductor was used to achieve low noise, and gate resistive matching was used to increase stability. The LNA showed a gain of 15.3 dB and a noise figure of 4.49 dB at 24 GHz, and it showed unconditional stability.