I. Ivanov, C. Hallin, A. Henry, O. Kordina, E. Janzén
{"title":"用光致发光光谱法标定4H-SiC供体掺杂","authors":"I. Ivanov, C. Hallin, A. Henry, O. Kordina, E. Janzén","doi":"10.1109/SIM.1996.570944","DOIUrl":null,"url":null,"abstract":"The relative intensity of the intrinsic and impurity-related luminescence lines reflects the impurity concentration. A calibration procedure is presented for the nitrogen donor impurity in 4H-SiC. The calibration is valid for a large range of n-type doping from 10/sup 14/ cm/sup -3/ to 3.10/sup 16/ cm/sup -3/. Above this level the free-exciton related emission is not observable and below careful attention regarding the compensation of the material should be noted.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Donor doping calibration in 4H-SiC using photoluminescence spectroscopy\",\"authors\":\"I. Ivanov, C. Hallin, A. Henry, O. Kordina, E. Janzén\",\"doi\":\"10.1109/SIM.1996.570944\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The relative intensity of the intrinsic and impurity-related luminescence lines reflects the impurity concentration. A calibration procedure is presented for the nitrogen donor impurity in 4H-SiC. The calibration is valid for a large range of n-type doping from 10/sup 14/ cm/sup -3/ to 3.10/sup 16/ cm/sup -3/. Above this level the free-exciton related emission is not observable and below careful attention regarding the compensation of the material should be noted.\",\"PeriodicalId\":391894,\"journal\":{\"name\":\"Proceedings of Semiconducting and Semi-Insulating Materials Conference\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-04-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Semiconducting and Semi-Insulating Materials Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIM.1996.570944\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1996.570944","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Donor doping calibration in 4H-SiC using photoluminescence spectroscopy
The relative intensity of the intrinsic and impurity-related luminescence lines reflects the impurity concentration. A calibration procedure is presented for the nitrogen donor impurity in 4H-SiC. The calibration is valid for a large range of n-type doping from 10/sup 14/ cm/sup -3/ to 3.10/sup 16/ cm/sup -3/. Above this level the free-exciton related emission is not observable and below careful attention regarding the compensation of the material should be noted.
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