{"title":"用于WLR测试的MOS-C松弛时间的自动分析","authors":"D. Monroe, S. Swanson","doi":"10.1109/IRWS.1997.660303","DOIUrl":null,"url":null,"abstract":"Summary form only given. The relaxation time of a metal oxide semiconductor capacitor (MOS-C) is the time required for the restoration of thermal equilibrium, after being pulsed into deep depletion. Relaxation time has become widely used for monitoring wafer processing, because it is sensitive to the presence of contaminants. This paper describes and compares two automated techniques for analysis of capacitor relaxation-time data to determine the mean generation lifetime, /spl tau//sub g/, for electron-hole pairs. The first technique is an enhanced version of an existing method, while the second is a new technique that requires much less data processing and is much more reliable as an automated analysis tool.","PeriodicalId":193522,"journal":{"name":"1997 IEEE International Integrated Reliability Workshop Final Report (Cat. No.97TH8319)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Automated analysis of MOS-C relaxation time for WLR testing\",\"authors\":\"D. Monroe, S. Swanson\",\"doi\":\"10.1109/IRWS.1997.660303\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. The relaxation time of a metal oxide semiconductor capacitor (MOS-C) is the time required for the restoration of thermal equilibrium, after being pulsed into deep depletion. Relaxation time has become widely used for monitoring wafer processing, because it is sensitive to the presence of contaminants. This paper describes and compares two automated techniques for analysis of capacitor relaxation-time data to determine the mean generation lifetime, /spl tau//sub g/, for electron-hole pairs. The first technique is an enhanced version of an existing method, while the second is a new technique that requires much less data processing and is much more reliable as an automated analysis tool.\",\"PeriodicalId\":193522,\"journal\":{\"name\":\"1997 IEEE International Integrated Reliability Workshop Final Report (Cat. No.97TH8319)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-10-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 IEEE International Integrated Reliability Workshop Final Report (Cat. No.97TH8319)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRWS.1997.660303\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 IEEE International Integrated Reliability Workshop Final Report (Cat. No.97TH8319)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRWS.1997.660303","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Automated analysis of MOS-C relaxation time for WLR testing
Summary form only given. The relaxation time of a metal oxide semiconductor capacitor (MOS-C) is the time required for the restoration of thermal equilibrium, after being pulsed into deep depletion. Relaxation time has become widely used for monitoring wafer processing, because it is sensitive to the presence of contaminants. This paper describes and compares two automated techniques for analysis of capacitor relaxation-time data to determine the mean generation lifetime, /spl tau//sub g/, for electron-hole pairs. The first technique is an enhanced version of an existing method, while the second is a new technique that requires much less data processing and is much more reliable as an automated analysis tool.