金属走线对双向可控硅ESD稳健性的影响

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI:10.1109/IPFA.2009.5232637

W. Guo, Mingliang Li, S. Dong

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引用次数: 3

摘要

研究了双向静电放电(ESD)保护中金属走线对可控硅(SCR)稳健性的影响。由于多指双向可控硅的电流传导不对称，根据金属走线类型的不同，正负方向上可能存在不同的失效电流It2。传输线脉冲(TLP)结果包括在支持分析。

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Effect of metal routing on the ESD robustness of dual-direction silicon controlled rectifier

Effect of metal routing on the robustness of silicon controlled rectifier (SCR) is studied for bi-direction electrostatic discharge (ESD) protection applications. Depending on the type of metal routing, different failure currents It2 can exist in the positive and negative directions due to the asymmetrical current conductions in the multi-finger dual-direction SCR. Transmission line pulsing (TLP) results are included in support of the analysis.

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2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits

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