高压4H-SiC垂直场效应管的动态特性

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) Pub Date : 1999-05-26 DOI:10.1109/ISPSD.1999.764129

H. Mitlehner, W. Bartsch, K. Dohnke, P. Friedrichs, R. Kaltschmidt, U. Weinert, B. Weis, D. Stephani

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引用次数: 46

摘要

我们已经开发了一种全新的结构，用于完全植入，正常导通的垂直结场效应晶体管(VJFET)，并制造了阻塞电压在600到1000 V之间的原型。在级联电路中，将SiC VJFET与50 V Si MOSFET一起安装在DCB衬底上，我们获得了常关高压开关。对于各种阻塞电压，VJFET的比导通电阻足够低，在18至40 m/spl ω /cm/sup 2/的范围内。由于两种不同p门网络的rc -积，动态特性显示关断时间在50 ns和2 /spl mu/s之间。

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Dynamic characteristics of high voltage 4H-SiC vertical JFETs

We have developed a novel structure for a fully implanted, normally-on vertical junction field effect transistor (VJFET) and fabricated prototypes with blocking voltages between 600 and 1000 V. Mounting the SiC VJFET together with a 50 V Si MOSFET on a DCB substrate in a cascode circuit, we obtain a normally-off high voltage switch. The specific on-resistance of the VJFET was sufficiently low, in the range of 18 to 40 m/spl Omega/cm/sup 2/, for various blocking voltages. The dynamic behaviour shows turn-off times between 50 ns and 2 /spl mu/s due to the RC-product of two different p-gate networks.

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11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)

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