利用等离子体CVD和偏置溅射技术实现层间介质堆叠的高性能多层互连系统

Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference Pub Date : 1989-06-12 DOI:10.1109/VMIC.1989.78001

M. Abe, Y. Mase, T. Katsura, O. Hirata, T. Yamamoto, S. Koguchi

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引用次数: 1

摘要

提出了一种新型的双极或BiCMOS lsi多层互连系统。偏置溅射石英(BSQ)和等离子体CVD SiO(P-SiO)构成堆叠夹层，使高纵横比(0.82)的表面光滑成为可能。研究了薄膜的电学性能和制备过程中的损伤。结果表明，该叠层结构具有良好的电气稳定性和可靠性。该系统已成功应用于实际设备。

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High performance multilevel interconnection system with stacked interlayer dielectrics by plasma CVD and bias sputtering

A novel multilevel interconnection system for bipolar or BiCMOS LSIs was developed. Bias sputtered quartz (BSQ) and plasma CVD SiO(P-SiO) constituted the stacked interlayer, making it possible to smooth high aspect ratio (0.82) topography. The electrical properties of the films and the manufacturing-process damage were investigated. The results show that the stacked structure offers good electrical stability and reliability. This system was successfully applied to real devices.<>

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Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference

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