KahHou Chan, B. Benbakhti, C. Riddet, J. Watling, A. Asenov
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引用次数: 1
摘要
采用锗等高迁移率的沟道材料可以增加pMOSFET的驱动电流，从而提高CMOS的开关速度。本研究利用蒙特卡罗模拟研究了横向间隔层厚度对20 nm栅长无植入量子阱(IFQW) Ge pMOSFET性能的影响。这些模拟结果表明，将间隔层从5nm缩小到1nm可能导致驱动电流增加约2.5倍。
Monte Carlo simulation of a 20 nm gate length implant free quantum well Ge pMOSFET with different lateral spacer width
The use of high mobility channel materials such as Germanium can increase the pMOSFET drive current, thus improving the switching speed of CMOS. In this study the impact of the lateral spacer thickness on the performance of a 20 nm gate-length implant-free quantum well (IFQW) Ge pMOSFET is investigated using comprehensive full-band Monte Carlo simulations. The results of these simulations show that the narrowing of the spacer from 5 nm down to 1 nm leads to a possible ∼ 2.5× increase in drive current.
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