{"title":"前接触ZnO:Ga对非晶硅薄膜太阳电池的腐蚀和退火影响","authors":"Hung-Jen Yang, Chien-Liang Wu, Chian-fu Huang, Chun-Heng Chen, Yi-Chan Chen, Wen-Cheng Lee","doi":"10.1109/ISNE.2010.5669201","DOIUrl":null,"url":null,"abstract":"For achieving higher performance of amorphous silicon thin film solar cell, the front-contact ZnO:Al is needed to be concerned. In this paper, we focus on how the front contact ZnO:Al influences the a-Si:H thin film solar cell. In order to understand the relationship between the front-contact ZnO:Al and device, we establish a model to simulate how the feature size of the textured ZnO:Al influence the haze and short-circuit current. Moreover we introduce the anneal effect on a-Si:H thin film solar cell.","PeriodicalId":412093,"journal":{"name":"2010 International Symposium on Next Generation Electronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The etching and annealing influences of front-contact ZnO:Ga on amorphous thin film silicon solar cells\",\"authors\":\"Hung-Jen Yang, Chien-Liang Wu, Chian-fu Huang, Chun-Heng Chen, Yi-Chan Chen, Wen-Cheng Lee\",\"doi\":\"10.1109/ISNE.2010.5669201\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"For achieving higher performance of amorphous silicon thin film solar cell, the front-contact ZnO:Al is needed to be concerned. In this paper, we focus on how the front contact ZnO:Al influences the a-Si:H thin film solar cell. In order to understand the relationship between the front-contact ZnO:Al and device, we establish a model to simulate how the feature size of the textured ZnO:Al influence the haze and short-circuit current. Moreover we introduce the anneal effect on a-Si:H thin film solar cell.\",\"PeriodicalId\":412093,\"journal\":{\"name\":\"2010 International Symposium on Next Generation Electronics\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-12-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 International Symposium on Next Generation Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISNE.2010.5669201\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 International Symposium on Next Generation Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISNE.2010.5669201","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The etching and annealing influences of front-contact ZnO:Ga on amorphous thin film silicon solar cells
For achieving higher performance of amorphous silicon thin film solar cell, the front-contact ZnO:Al is needed to be concerned. In this paper, we focus on how the front contact ZnO:Al influences the a-Si:H thin film solar cell. In order to understand the relationship between the front-contact ZnO:Al and device, we establish a model to simulate how the feature size of the textured ZnO:Al influence the haze and short-circuit current. Moreover we introduce the anneal effect on a-Si:H thin film solar cell.
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