电离辐射诱导体finfet降解的长度和翅片数依赖性

2013 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2013-04-14 DOI:10.1109/IRPS.2013.6532115

I. Chatterjee, E. Zhang, B. Bhuva, D. Fleetwood, Y. Fang, A. Oates

{"title":"电离辐射诱导体finfet降解的长度和翅片数依赖性","authors":"I. Chatterjee, E. Zhang, B. Bhuva, D. Fleetwood, Y. Fang, A. Oates","doi":"10.1109/IRPS.2013.6532115","DOIUrl":null,"url":null,"abstract":"Ultra-small bulk FinFETs (dual-well and triple-well) from a commercial process have been exposed to total ionizing dose. The devices have varying numbers of fins and channel length. The devices show a significant increase in off-state leakage current, threshold voltage shift, transconductance and subthreshold slope degradation after irradiation to 300 krad(SiO2). The results also show a strong dependence of fin-to-fin variation and trapped charge in the STI on the radiation response of the devices.","PeriodicalId":138206,"journal":{"name":"2013 IEEE International Reliability Physics Symposium (IRPS)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"Length and fin number dependence of ionizing radiation-induced degradation in bulk FinFETs\",\"authors\":\"I. Chatterjee, E. Zhang, B. Bhuva, D. Fleetwood, Y. Fang, A. Oates\",\"doi\":\"10.1109/IRPS.2013.6532115\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Ultra-small bulk FinFETs (dual-well and triple-well) from a commercial process have been exposed to total ionizing dose. The devices have varying numbers of fins and channel length. The devices show a significant increase in off-state leakage current, threshold voltage shift, transconductance and subthreshold slope degradation after irradiation to 300 krad(SiO2). The results also show a strong dependence of fin-to-fin variation and trapped charge in the STI on the radiation response of the devices.\",\"PeriodicalId\":138206,\"journal\":{\"name\":\"2013 IEEE International Reliability Physics Symposium (IRPS)\",\"volume\":\"32 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-04-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Reliability Physics Symposium (IRPS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.2013.6532115\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2013.6532115","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 14

摘要

超小体积finfet(双孔和三孔)已经暴露在总电离剂量下。该装置具有不同数量的鳍和通道长度。辐照至300 krad(SiO2)后，器件的非稳态泄漏电流、阈值电压偏移、跨导和亚阈值斜率退化显著增加。结果还表明，鳍对鳍的变化和STI中捕获的电荷对器件的辐射响应有很强的依赖性。

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Length and fin number dependence of ionizing radiation-induced degradation in bulk FinFETs

Ultra-small bulk FinFETs (dual-well and triple-well) from a commercial process have been exposed to total ionizing dose. The devices have varying numbers of fins and channel length. The devices show a significant increase in off-state leakage current, threshold voltage shift, transconductance and subthreshold slope degradation after irradiation to 300 krad(SiO2). The results also show a strong dependence of fin-to-fin variation and trapped charge in the STI on the radiation response of the devices.

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2013 IEEE International Reliability Physics Symposium (IRPS)

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