把系统拆下来-拆到芯片上

S. Mohammadi
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引用次数: 1

摘要

纳米级绝缘体上硅(SOI)技术是一种适用于集成电路和系统的设计环境。瓦级堆叠功率放大器(pa)实现在CMOS SOI技术工作从射频到毫米波频率已被证明。挑战在于将PA效率提高到GaAs和GaN技术所达到的水平。CMOS SOI技术还为实现超低功耗电路、集成天线和后处理集成传感器和执行器提供了独特的机会。给出了CMOS SOI电路和集成器件的实例,并讨论了未来单片机系统的特点。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Bring the system down — To a chip
Nanoscale CMOS Silicon on Insulator (SOI) technology is a design environment suitable for integrated circuits and systems. Watt-level stacked power amplifiers (PAs) implemented in CMOS SOI technology operating from RF to mm-wave frequencies have been demonstrated. The challenge is to improve PA efficiencies to the level achieved by GaAs and GaN technologies. CMOS SOI technology also offers a unique opportunity to implement ultra-low power circuits, integrated antennae and post-processed integrated sensors and actuators. Examples of CMOS SOI circuits and integrated devices are presented and characteristics of future single-chip systems are discussed.
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