无片外元件的精确恒跨导生成

Imon Mondal, N. Krishnapura
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引用次数: 3

摘要

提出了一种不使用任何片外元件的工艺、电压和温度不变的跨导产生技术。它通过跟踪线性区域的MOSFET产生跨导,其电导由使用恒定电压和电流参考的负反馈精确控制。采用0.13μm CMOS技术的原型晶体管的仿真结果表明,当温度变化120°C时,误差小于0.5%,当失配时误差为±4%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Accurate Constant Transconductance Generation without Off-Chip Components
A process, voltage, and temperature invariant transconductance generation technique without the use of any off-chip components is proposed. It generates transconductance by tracking an MOSFET in linear region, whose conductance is precisely controlled by negative feedback using constant voltage and current references. Simulation results of a prototype transconductor in 0.13μm CMOS technology show an inaccuracy of less than 0.5% for 120°C variation of temperature and a deviation of ±4 % with mismatch.
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