{"title":"硅微机械热剖面仪","authors":"Y. Gianchandani, K. Najafi, B. Orr","doi":"10.1109/IEDM.1993.347244","DOIUrl":null,"url":null,"abstract":"This paper presents a class of scanning thermal profilers micromachined from bulk silicon. Each device consists of an Au-polysilicon thermocouple supported by a probe shank overhanging the edge of the device substrate. The probe shank is suspended by flexural beams and can be electrostatically excited into physical motion by lateral comb drives. A polysilicon heater that can be used to provide a thermal bias during the scan lies at its base. Variations of the basic design include suspension of the thermocouple on a dielectric diaphragm, and replacing the thermocouple by a thermopile. A single-sided, IC-compatible 8 mask process has been developed to fabricate these devices. Preliminary data from test scans obtained using a simple set-up indicates that temperature resolution better than 20/spl deg/mC is possible even with basic silicon shank devices.<<ETX>>","PeriodicalId":346650,"journal":{"name":"Proceedings of IEEE International Electron Devices Meeting","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Silicon micromachined thermal profilers\",\"authors\":\"Y. Gianchandani, K. Najafi, B. Orr\",\"doi\":\"10.1109/IEDM.1993.347244\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a class of scanning thermal profilers micromachined from bulk silicon. Each device consists of an Au-polysilicon thermocouple supported by a probe shank overhanging the edge of the device substrate. The probe shank is suspended by flexural beams and can be electrostatically excited into physical motion by lateral comb drives. A polysilicon heater that can be used to provide a thermal bias during the scan lies at its base. Variations of the basic design include suspension of the thermocouple on a dielectric diaphragm, and replacing the thermocouple by a thermopile. A single-sided, IC-compatible 8 mask process has been developed to fabricate these devices. Preliminary data from test scans obtained using a simple set-up indicates that temperature resolution better than 20/spl deg/mC is possible even with basic silicon shank devices.<<ETX>>\",\"PeriodicalId\":346650,\"journal\":{\"name\":\"Proceedings of IEEE International Electron Devices Meeting\",\"volume\":\"23 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-12-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEEE International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1993.347244\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1993.347244","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper presents a class of scanning thermal profilers micromachined from bulk silicon. Each device consists of an Au-polysilicon thermocouple supported by a probe shank overhanging the edge of the device substrate. The probe shank is suspended by flexural beams and can be electrostatically excited into physical motion by lateral comb drives. A polysilicon heater that can be used to provide a thermal bias during the scan lies at its base. Variations of the basic design include suspension of the thermocouple on a dielectric diaphragm, and replacing the thermocouple by a thermopile. A single-sided, IC-compatible 8 mask process has been developed to fabricate these devices. Preliminary data from test scans obtained using a simple set-up indicates that temperature resolution better than 20/spl deg/mC is possible even with basic silicon shank devices.<>