{"title":"PSS-PVA/n-Si异质结二极管电子参数的提取","authors":"D. Khan, M. H. Sayyad","doi":"10.1109/ICCRD.2010.114","DOIUrl":null,"url":null,"abstract":"Using spin coating, a PEDOT:PSS-PVA/n-Si device has been fabricated by depositing the composite of conducting polymer PEDOT:PSS and poly(vinyl alcohol) on n-Si substrate. The current-voltage measurements of the device have been evaluated at room temperature in dark. The PEDOT:PSSPVA/ n-Si structure demonstrated the rectifying behavior. The various electronic parameters such as rectification ratio, turn on voltage, ideality factor, reverse saturation current, barrier height, series and shunt resistances were extracted from the IV characteristics of this diode. The values of ideality factor and series resistance were also verified by using Cheung functions. In addition, the conduction mechanism in the device was also investigated by I-V curves.","PeriodicalId":158568,"journal":{"name":"2010 Second International Conference on Computer Research and Development","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Extraction of Electronic Parameters of PEDOT:PSS-PVA/n-Si Heterojunction Diode\",\"authors\":\"D. Khan, M. H. Sayyad\",\"doi\":\"10.1109/ICCRD.2010.114\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Using spin coating, a PEDOT:PSS-PVA/n-Si device has been fabricated by depositing the composite of conducting polymer PEDOT:PSS and poly(vinyl alcohol) on n-Si substrate. The current-voltage measurements of the device have been evaluated at room temperature in dark. The PEDOT:PSSPVA/ n-Si structure demonstrated the rectifying behavior. The various electronic parameters such as rectification ratio, turn on voltage, ideality factor, reverse saturation current, barrier height, series and shunt resistances were extracted from the IV characteristics of this diode. The values of ideality factor and series resistance were also verified by using Cheung functions. In addition, the conduction mechanism in the device was also investigated by I-V curves.\",\"PeriodicalId\":158568,\"journal\":{\"name\":\"2010 Second International Conference on Computer Research and Development\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-05-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 Second International Conference on Computer Research and Development\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCRD.2010.114\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 Second International Conference on Computer Research and Development","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCRD.2010.114","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Extraction of Electronic Parameters of PEDOT:PSS-PVA/n-Si Heterojunction Diode
Using spin coating, a PEDOT:PSS-PVA/n-Si device has been fabricated by depositing the composite of conducting polymer PEDOT:PSS and poly(vinyl alcohol) on n-Si substrate. The current-voltage measurements of the device have been evaluated at room temperature in dark. The PEDOT:PSSPVA/ n-Si structure demonstrated the rectifying behavior. The various electronic parameters such as rectification ratio, turn on voltage, ideality factor, reverse saturation current, barrier height, series and shunt resistances were extracted from the IV characteristics of this diode. The values of ideality factor and series resistance were also verified by using Cheung functions. In addition, the conduction mechanism in the device was also investigated by I-V curves.
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