{"title":"采用0.13μm SiGe HBT技术的24ghz, 18dbm全集成功率放大器","authors":"N. Demirel, E. Kerhervé, D. Pache, R. Plana","doi":"10.1109/RME.2008.4595756","DOIUrl":null,"url":null,"abstract":"A 24 GHz, +18.0 dBm fully-integrated power amplifier (PA) with 50 Omega input and output matching is designed in 0.13 mum SiGe BiCMOS process. The power amplifier features a peak power gain of 7.8 dB with 15.89 dBm output power at 1 dB compression and a maximum single-ended output power of +18.0 dBm with 25.9% of power-added efficiency (PAE). The power amplifier uses a single 1.8 V supply and was fully integrated (including matching elements and bias circuit). The matching networks use inductors and MIM capacitors for high integration purpose, the circuit occupies a small area of 0.3 mm2 (including pads and matching networks).","PeriodicalId":140550,"journal":{"name":"2008 Ph.D. Research in Microelectronics and Electronics","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A 24 GHz, 18 dBm fully integrated power amplifier in a 0.13μm SiGe HBT technology\",\"authors\":\"N. Demirel, E. Kerhervé, D. Pache, R. Plana\",\"doi\":\"10.1109/RME.2008.4595756\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 24 GHz, +18.0 dBm fully-integrated power amplifier (PA) with 50 Omega input and output matching is designed in 0.13 mum SiGe BiCMOS process. The power amplifier features a peak power gain of 7.8 dB with 15.89 dBm output power at 1 dB compression and a maximum single-ended output power of +18.0 dBm with 25.9% of power-added efficiency (PAE). The power amplifier uses a single 1.8 V supply and was fully integrated (including matching elements and bias circuit). The matching networks use inductors and MIM capacitors for high integration purpose, the circuit occupies a small area of 0.3 mm2 (including pads and matching networks).\",\"PeriodicalId\":140550,\"journal\":{\"name\":\"2008 Ph.D. Research in Microelectronics and Electronics\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-08-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 Ph.D. Research in Microelectronics and Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RME.2008.4595756\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 Ph.D. Research in Microelectronics and Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RME.2008.4595756","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 24 GHz, 18 dBm fully integrated power amplifier in a 0.13μm SiGe HBT technology
A 24 GHz, +18.0 dBm fully-integrated power amplifier (PA) with 50 Omega input and output matching is designed in 0.13 mum SiGe BiCMOS process. The power amplifier features a peak power gain of 7.8 dB with 15.89 dBm output power at 1 dB compression and a maximum single-ended output power of +18.0 dBm with 25.9% of power-added efficiency (PAE). The power amplifier uses a single 1.8 V supply and was fully integrated (including matching elements and bias circuit). The matching networks use inductors and MIM capacitors for high integration purpose, the circuit occupies a small area of 0.3 mm2 (including pads and matching networks).
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