MOSFET器件中界面阱和氧化物电荷横向轮廓的改进方法

1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453) Pub Date : 1999-06-08 DOI:10.1109/VTSA.1999.786007

A. Melik-Martirosian, T. Ma

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引用次数: 4

摘要

提出了一种改进的氧化电荷和界面-圈闭侧向剖面电荷泵送技术。研究了Flash EPROM器件中擦除引起的氧化电荷和界面陷阱。结果表明，改进后的技术可以在以前的方法不能产生令人满意的结果的情况下提取轮廓。

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Improved method for lateral profiling of interface traps and oxide charge in MOSFET devices

An improved oxide-charge and interface-trap lateral profiling charge pumping technique is proposed. Erase-induced oxide charge and interface traps are investigated in Flash EPROM devices. It is shown that the improved technique allows the extraction of profiles in cases where the previous method does not yield satisfactory results.

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来源期刊

1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453)

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