K. Kwon, S. Park, C. Kang, Y.N. Kim, S.T. Ahn, M.Y. Lee
{"title":"用于高密度dram的BPSG在850/spl度/C回流后无退化的Ta/sub 2/O/sub 5/电容器","authors":"K. Kwon, S. Park, C. Kang, Y.N. Kim, S.T. Ahn, M.Y. Lee","doi":"10.1109/IEDM.1993.347400","DOIUrl":null,"url":null,"abstract":"The thermal degradation of the Ta/sub 2/O/sub 5/ capacitor during BPSG reflow has been studied. The cause of deterioration of Ta/sub 2/O/sub 5/ with the TiN top electrode was found to be the oxidation of TiN. By inserting poly-Si between TiN and BPSG to suppress oxidation, the low leakage current level was maintained after BPSG reflow at 850/spl deg/C. The Ta/sub 2/O/sub 5/ capacitor with the TiN/poly-Si top electrode was integrated into 64 Mbit DRAMs and excellent leakage current characteristics were obtained.<<ETX>>","PeriodicalId":346650,"journal":{"name":"Proceedings of IEEE International Electron Devices Meeting","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Degradation-free Ta/sub 2/O/sub 5/ capacitor after BPSG reflow at 850/spl deg/C for high density DRAMs\",\"authors\":\"K. Kwon, S. Park, C. Kang, Y.N. Kim, S.T. Ahn, M.Y. Lee\",\"doi\":\"10.1109/IEDM.1993.347400\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The thermal degradation of the Ta/sub 2/O/sub 5/ capacitor during BPSG reflow has been studied. The cause of deterioration of Ta/sub 2/O/sub 5/ with the TiN top electrode was found to be the oxidation of TiN. By inserting poly-Si between TiN and BPSG to suppress oxidation, the low leakage current level was maintained after BPSG reflow at 850/spl deg/C. The Ta/sub 2/O/sub 5/ capacitor with the TiN/poly-Si top electrode was integrated into 64 Mbit DRAMs and excellent leakage current characteristics were obtained.<<ETX>>\",\"PeriodicalId\":346650,\"journal\":{\"name\":\"Proceedings of IEEE International Electron Devices Meeting\",\"volume\":\"48 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-12-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEEE International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1993.347400\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1993.347400","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Degradation-free Ta/sub 2/O/sub 5/ capacitor after BPSG reflow at 850/spl deg/C for high density DRAMs
The thermal degradation of the Ta/sub 2/O/sub 5/ capacitor during BPSG reflow has been studied. The cause of deterioration of Ta/sub 2/O/sub 5/ with the TiN top electrode was found to be the oxidation of TiN. By inserting poly-Si between TiN and BPSG to suppress oxidation, the low leakage current level was maintained after BPSG reflow at 850/spl deg/C. The Ta/sub 2/O/sub 5/ capacitor with the TiN/poly-Si top electrode was integrated into 64 Mbit DRAMs and excellent leakage current characteristics were obtained.<>
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