硅纳米线隧道场效应晶体管(NW-TFET)特性分析

2020 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT) Pub Date : 2020-07-01 DOI:10.1109/CONECCT50063.2020.9198578

P. Vimala, S. S, Likith Krishna L, Manjunath Bassapuri, Thiruveedi Manikanta

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引用次数: 6

摘要

本文介绍了纳米线隧道场效应晶体管(NW-TFET)的设计结构。在nanohub器件仿真工具上进行器件仿真。分析了不同漏极电压、沟道长度和沟道厚度下的能隙和漏极电流等参数，并对不同介电值下的漏极电流进行了分析，发现介电值对NW-TFET没有影响

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Characteristic Analysis of Silicon Nanowire Tunnel Field Effect Transistor (NW-TFET)

This paper describes the design structure of the nanowire tunnel field effect transistor (NW-TFET). The device simulation carried on nanohub device simulation tool. The parameters such as energy gap and drain current are analyzed for different values of drain voltage, channel length and channel thickness furthermore the drain current analysis are done for various dielectric values and observed that dielectric values are not having impact with NW-TFET

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来源期刊

2020 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT)

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