H. Mulaosmanovic, J. Ocker, S. Müller, M. Noack, J. Müller, P. Polakowski, T. Mikolajick, S. Slesazeck
{"title":"基于新型铁电场效应晶体管的神经形态系统突触","authors":"H. Mulaosmanovic, J. Ocker, S. Müller, M. Noack, J. Müller, P. Polakowski, T. Mikolajick, S. Slesazeck","doi":"10.23919/VLSIT.2017.7998165","DOIUrl":null,"url":null,"abstract":"A compact nanoscale device emulating the functionality of biological synapses is an essential element for neuromorphic systems. Here we present for the first time a synapse based on a single ferroelectric FET (FeFET) integrated in a 28nm HKMG technology, having hafnium oxide as the ferroelectric and a resistive element in series. The gradual and non-volatile ferroelectric switching is exploited to mimic the synaptic weight. We demonstrate both the spike-timing dependent plasticity (STDP) and the signal transmission and discuss the effect of the spike properties and circuit design on STDP.","PeriodicalId":333275,"journal":{"name":"2017 Symposium on VLSI Technology","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"156","resultStr":"{\"title\":\"Novel ferroelectric FET based synapse for neuromorphic systems\",\"authors\":\"H. Mulaosmanovic, J. Ocker, S. Müller, M. Noack, J. Müller, P. Polakowski, T. Mikolajick, S. Slesazeck\",\"doi\":\"10.23919/VLSIT.2017.7998165\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A compact nanoscale device emulating the functionality of biological synapses is an essential element for neuromorphic systems. Here we present for the first time a synapse based on a single ferroelectric FET (FeFET) integrated in a 28nm HKMG technology, having hafnium oxide as the ferroelectric and a resistive element in series. The gradual and non-volatile ferroelectric switching is exploited to mimic the synaptic weight. We demonstrate both the spike-timing dependent plasticity (STDP) and the signal transmission and discuss the effect of the spike properties and circuit design on STDP.\",\"PeriodicalId\":333275,\"journal\":{\"name\":\"2017 Symposium on VLSI Technology\",\"volume\":\"48 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-06-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"156\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 Symposium on VLSI Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/VLSIT.2017.7998165\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/VLSIT.2017.7998165","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Novel ferroelectric FET based synapse for neuromorphic systems
A compact nanoscale device emulating the functionality of biological synapses is an essential element for neuromorphic systems. Here we present for the first time a synapse based on a single ferroelectric FET (FeFET) integrated in a 28nm HKMG technology, having hafnium oxide as the ferroelectric and a resistive element in series. The gradual and non-volatile ferroelectric switching is exploited to mimic the synaptic weight. We demonstrate both the spike-timing dependent plasticity (STDP) and the signal transmission and discuss the effect of the spike properties and circuit design on STDP.