毫米波和太赫兹乘数:进步和机遇

M. Abbasi, D. Ricketts
{"title":"毫米波和太赫兹乘数:进步和机遇","authors":"M. Abbasi, D. Ricketts","doi":"10.1109/APMC.2016.7931425","DOIUrl":null,"url":null,"abstract":"This paper introduces a new way of evaluating performance of mm-wave integrated multiplier chains based on the power efficiency. Although superior performance of III–V technologies are acknowledged, focus of the paper will be on Silicon circuits which are more suited for large-scale multi-element integrated arrays. It will be discussed that power efficiency of the multiplier chain including the dc power required for generating the input RF signal is a very important metric for selecting the topology and configuration of the system. We will demonstrate that proper choice of topology as well as optimized circuit design yield state-of-the art output power at 260GHz–280GHz in SiGe and CMOS circuits.","PeriodicalId":166478,"journal":{"name":"2016 Asia-Pacific Microwave Conference (APMC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"mm-Wave and THz multipliers: Advances and opportunities\",\"authors\":\"M. Abbasi, D. Ricketts\",\"doi\":\"10.1109/APMC.2016.7931425\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper introduces a new way of evaluating performance of mm-wave integrated multiplier chains based on the power efficiency. Although superior performance of III–V technologies are acknowledged, focus of the paper will be on Silicon circuits which are more suited for large-scale multi-element integrated arrays. It will be discussed that power efficiency of the multiplier chain including the dc power required for generating the input RF signal is a very important metric for selecting the topology and configuration of the system. We will demonstrate that proper choice of topology as well as optimized circuit design yield state-of-the art output power at 260GHz–280GHz in SiGe and CMOS circuits.\",\"PeriodicalId\":166478,\"journal\":{\"name\":\"2016 Asia-Pacific Microwave Conference (APMC)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 Asia-Pacific Microwave Conference (APMC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/APMC.2016.7931425\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 Asia-Pacific Microwave Conference (APMC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APMC.2016.7931425","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

介绍了一种基于功率效率的毫米波集成乘法链性能评价新方法。虽然III-V技术的优越性能得到了承认,但本文的重点将放在更适合大规模多元件集成阵列的硅电路上。我们将讨论乘法器链的功率效率,包括产生输入射频信号所需的直流功率,是选择系统拓扑和配置的一个非常重要的指标。我们将证明,在SiGe和CMOS电路中,适当的拓扑选择和优化的电路设计可产生260GHz-280GHz的最先进输出功率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
mm-Wave and THz multipliers: Advances and opportunities
This paper introduces a new way of evaluating performance of mm-wave integrated multiplier chains based on the power efficiency. Although superior performance of III–V technologies are acknowledged, focus of the paper will be on Silicon circuits which are more suited for large-scale multi-element integrated arrays. It will be discussed that power efficiency of the multiplier chain including the dc power required for generating the input RF signal is a very important metric for selecting the topology and configuration of the system. We will demonstrate that proper choice of topology as well as optimized circuit design yield state-of-the art output power at 260GHz–280GHz in SiGe and CMOS circuits.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信