应变锗微桥获得直接带隙激光器

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI:10.1109/ISTDM.2014.6874706

R. Geiger, M. Suess, C. Bonzon, R. Spolenak, J. Faist, H. Sigg

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引用次数: 3

摘要

最近IV族材料(如Ge及其与Sn的合金)的发光演示更新了实现全IV族光电平台的愿景。我们将这些方法与我们的应变法进行了比较，并提到了进一步改进材料和概念的有益研究。

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Strained Ge microbridges to obtain a direct bandgap laser

Recent demonstrations of light emission from group IV materials such as Ge and its alloy with Sn renew the vision for the realization of an all group IV based opto-electronic platform. We compare some of these approaches to our strain method and mention rewarding research to further improve materials and concepts.

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2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)

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