{"title":"具有天然明胶的柔性RRAM具有高电流开/关比和保留率","authors":"Anurag Dwivedi, Anil Lodhi, Shalu Saini, Harshit Agarwal, Shree Prakash Tiwari","doi":"10.1109/IFETC53656.2022.9948508","DOIUrl":null,"url":null,"abstract":"Natural protein Gelatin is explored as a promising insulating layer for demonstration of high performance flexible electrochemical metallization type resistive random-access memory (RRAM) devices. The fabricated flexible RRAM devices exhibited excellent switching behaviour with very high current on/off ratio of greater than 105 and data retention time of higher than 104 s without any obvious degradation in the memory performance. These results indicate that natural materials have potential to be used for high performance devices for eco-sustainable electronics.","PeriodicalId":289035,"journal":{"name":"2022 IEEE International Flexible Electronics Technology Conference (IFETC)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Flexible RRAM with Natural Gelatin Exhibiting High Current On/Off Ratio and Retention\",\"authors\":\"Anurag Dwivedi, Anil Lodhi, Shalu Saini, Harshit Agarwal, Shree Prakash Tiwari\",\"doi\":\"10.1109/IFETC53656.2022.9948508\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Natural protein Gelatin is explored as a promising insulating layer for demonstration of high performance flexible electrochemical metallization type resistive random-access memory (RRAM) devices. The fabricated flexible RRAM devices exhibited excellent switching behaviour with very high current on/off ratio of greater than 105 and data retention time of higher than 104 s without any obvious degradation in the memory performance. These results indicate that natural materials have potential to be used for high performance devices for eco-sustainable electronics.\",\"PeriodicalId\":289035,\"journal\":{\"name\":\"2022 IEEE International Flexible Electronics Technology Conference (IFETC)\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-08-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE International Flexible Electronics Technology Conference (IFETC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IFETC53656.2022.9948508\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE International Flexible Electronics Technology Conference (IFETC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IFETC53656.2022.9948508","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Flexible RRAM with Natural Gelatin Exhibiting High Current On/Off Ratio and Retention
Natural protein Gelatin is explored as a promising insulating layer for demonstration of high performance flexible electrochemical metallization type resistive random-access memory (RRAM) devices. The fabricated flexible RRAM devices exhibited excellent switching behaviour with very high current on/off ratio of greater than 105 and data retention time of higher than 104 s without any obvious degradation in the memory performance. These results indicate that natural materials have potential to be used for high performance devices for eco-sustainable electronics.
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