{"title":"MoSi2纳米晶对非易失性存储器件的影响","authors":"Jian-Yang Lin, Sheng-Chi Chen","doi":"10.1109/NMDC.2013.6707469","DOIUrl":null,"url":null,"abstract":"This work has demonstrated the electron charging and discharging effects of MoSi<sub>2</sub> nanocrystals embedded in the a-Si layer of a nonvolatile memory (NVM) structure. The MoSi<sub>2</sub> nanocrystals were formed by the thermal annealing of the Mo-Si layer. A very thin silicon dioxide layer of 5 nm was deposited as the tunnel dielectric and a significant capacitance-voltage hysteresis of voltage shift was observed by using another SiO<sub>2</sub> layer as the control oxide. The memory window of the SiO<sub>2</sub>/Mo-Si/SiO<sub>2</sub> structure with MoSi<sub>2</sub> nanocrystals is sufficiently high even under low-voltage programming.","PeriodicalId":112068,"journal":{"name":"2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effects of MoSi2 nanocrystals in nonvolatile memory devices\",\"authors\":\"Jian-Yang Lin, Sheng-Chi Chen\",\"doi\":\"10.1109/NMDC.2013.6707469\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work has demonstrated the electron charging and discharging effects of MoSi<sub>2</sub> nanocrystals embedded in the a-Si layer of a nonvolatile memory (NVM) structure. The MoSi<sub>2</sub> nanocrystals were formed by the thermal annealing of the Mo-Si layer. A very thin silicon dioxide layer of 5 nm was deposited as the tunnel dielectric and a significant capacitance-voltage hysteresis of voltage shift was observed by using another SiO<sub>2</sub> layer as the control oxide. The memory window of the SiO<sub>2</sub>/Mo-Si/SiO<sub>2</sub> structure with MoSi<sub>2</sub> nanocrystals is sufficiently high even under low-voltage programming.\",\"PeriodicalId\":112068,\"journal\":{\"name\":\"2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC)\",\"volume\":\"28 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NMDC.2013.6707469\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NMDC.2013.6707469","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effects of MoSi2 nanocrystals in nonvolatile memory devices
This work has demonstrated the electron charging and discharging effects of MoSi2 nanocrystals embedded in the a-Si layer of a nonvolatile memory (NVM) structure. The MoSi2 nanocrystals were formed by the thermal annealing of the Mo-Si layer. A very thin silicon dioxide layer of 5 nm was deposited as the tunnel dielectric and a significant capacitance-voltage hysteresis of voltage shift was observed by using another SiO2 layer as the control oxide. The memory window of the SiO2/Mo-Si/SiO2 structure with MoSi2 nanocrystals is sufficiently high even under low-voltage programming.
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