针对工业功率应用的基于gan的10.1MHz f -1类300w连续波放大器

2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI:10.1109/CSICS.2016.7751019

Florian A. Maier, D. Krausse, D. Gruner, R. Reiner, P. Waltereit, R. Quay, O. Ambacher

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引用次数: 2

摘要

本文研究了一种新型的AlGaN/GaN hemt型大功率放大器，用于工业电源中的连续波工作。开发了功率密度为50 W/mm2的GaN HEMT器件，以应对这些应用中的特定挑战。在对所研制晶体管的射频负载-拉测量的基础上，实现并研究了一种输出功率为300 W、工作频率为10 MHz时效率为74%的反f类功率放大器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A GaN-Based 10.1MHz Class-F-1 300 W Continuous Wave Amplifier Targeting Industrial Power Applications

This paper investigates a novel AlGaN/GaN HEMT-based high power amplifier for continuous wave operation in industrial power applications. A GaN HEMT device with a power density of 50 W/mm2 was developed to counter specific challenges in these applications. Based on RF load-pull measurements of the developed transistors an inverse class-F power amplifier with an output power of 300 W and an efficiency of 74 % at 10 MHz was implemented and investigated.

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2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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