基于ekv的多输入浮栅mosfet偏置CMOS模拟单元的方法

A. Medina-Vázquez, M. Meda-Campaña, M. A. Gurrola-Navarro, E. Becerra-Alvarez
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引用次数: 0

摘要

介绍了一种基于多输入浮栅MOS晶体管的弱反转区CMOS模拟单元偏置的MATLAB方法。尽管SPICE语言是一种被广泛接受的设计CMOS模拟单元的工具,但它在模拟基于多输入浮栅晶体管的电路时存在一些问题,因为浮节点的出现会引起收敛和初始化问题。本文介绍的策略完全是在MATLAB环境下基于EKV晶体管模型实现的。通过实例,讨论了使用运算放大器的方法。此外,由于可以很容易地修改MATLAB代码来改进模型并减少仿真结果与测量结果之间的误差,因此该技术便于偏差和分析。这项技术可能对有兴趣使用浮栅晶体管设计弱反转模拟单元的学生有用,但对专业设计人员也有帮助。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
EKV-based method for biasing CMOS analog cells using mUltiple-Inputs Floating Gate MOSFETs
A MATLAB method is introduced for biasing CMOS analog cells operating in weak inversion region and based on the Multiple-Input Floating Gate MOS Transistor. Despite SPICE language is a widely accepted tool to design CMOS analog cells, it has some problems to simulate circuits based on the Multiple-Input Floating Gate Transistor since floating nodes appear giving rise to problems of convergence and initialization. The strategy introduced here is implemented entirely in the MATLAB environment and based on the EKV transistor model. By way of example, the method is discussed using an operational amplifier. Furthermore, this technique facilitates both the bias and analysis because the MATLAB code can be easily modified to improve the model and reduce the error between simulation and measurement results. This technique may be useful for students interested in designing weak inversion analog cells using the floating gate transisor but can also be helpful for professional designers.
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