布局依赖效应:近期CMOS节点对器件性能和可靠性的影响

2016 IEEE International Integrated Reliability Workshop (IIRW) Pub Date : 1900-01-01 DOI:10.1109/IIRW.2016.7904894

C. Ndiaye, V. Huard, R. Bertholon, M. Rafik, X. Federspiel, A. Bravaix

{"title":"布局依赖效应:近期CMOS节点对器件性能和可靠性的影响","authors":"C. Ndiaye, V. Huard, R. Bertholon, M. Rafik, X. Federspiel, A. Bravaix","doi":"10.1109/IIRW.2016.7904894","DOIUrl":null,"url":null,"abstract":"In this paper, we analyze the impact of Layout Dependent Effect (LDE) observed on MOSFETs. It is shown that changing the Layout have an impact on MOSFET device parameters and reliability. Here, we studied the Well Proximity Effect (WPE), Length of diffusion (LOD) and Oxide Spacing Effect (OSE) impacts on device MOSFET parameters and reliability. We also analyzed SiGe impacts on LDE, since it is commonly used to boost device performance.","PeriodicalId":436183,"journal":{"name":"2016 IEEE International Integrated Reliability Workshop (IIRW)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"Layout Dependent Effect: Impact on device performance and reliability in recent CMOS nodes\",\"authors\":\"C. Ndiaye, V. Huard, R. Bertholon, M. Rafik, X. Federspiel, A. Bravaix\",\"doi\":\"10.1109/IIRW.2016.7904894\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we analyze the impact of Layout Dependent Effect (LDE) observed on MOSFETs. It is shown that changing the Layout have an impact on MOSFET device parameters and reliability. Here, we studied the Well Proximity Effect (WPE), Length of diffusion (LOD) and Oxide Spacing Effect (OSE) impacts on device MOSFET parameters and reliability. We also analyzed SiGe impacts on LDE, since it is commonly used to boost device performance.\",\"PeriodicalId\":436183,\"journal\":{\"name\":\"2016 IEEE International Integrated Reliability Workshop (IIRW)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE International Integrated Reliability Workshop (IIRW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IIRW.2016.7904894\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Integrated Reliability Workshop (IIRW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIRW.2016.7904894","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 14

摘要

本文分析了版图相关效应(LDE)对mosfet的影响。结果表明，改变布局对MOSFET器件参数和可靠性都有影响。在这里，我们研究了井邻近效应(WPE)、扩散长度(LOD)和氧化物间距效应(OSE)对器件MOSFET参数和可靠性的影响。我们还分析了SiGe对LDE的影响，因为它通常用于提高设备性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Layout Dependent Effect: Impact on device performance and reliability in recent CMOS nodes

In this paper, we analyze the impact of Layout Dependent Effect (LDE) observed on MOSFETs. It is shown that changing the Layout have an impact on MOSFET device parameters and reliability. Here, we studied the Well Proximity Effect (WPE), Length of diffusion (LOD) and Oxide Spacing Effect (OSE) impacts on device MOSFET parameters and reliability. We also analyzed SiGe impacts on LDE, since it is commonly used to boost device performance.

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2016 IEEE International Integrated Reliability Workshop (IIRW)

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